| Artikelnummer : | RN1910,LF(CT |
|---|---|
| Hersteller / Marke : | Toshiba Semiconductor and Storage |
| Beschreibung : | TRANS 2NPN PREBIAS 0.1W US6 |
| RoHS Status : | Bleifrei / RoHS-konform |
| Verfügbare Menge | 646379 pcs |
| Datenblätte | RN1910,LF(CT.pdf |
| Spannung - Kollektor-Emitter-Durchbruch (max) | 50V |
| VCE Sättigung (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Transistor-Typ | 2 NPN - Pre-Biased (Dual) |
| Supplier Device-Gehäuse | US6 |
| Serie | - |
| Widerstand - Emitterbasis (R2) | - |
| Widerstand - Basis (R1) | 4.7 kOhms |
| Leistung - max | 100mW |
| Verpackung | Original-Reel® |
| Verpackung / Gehäuse | 6-TSSOP, SC-88, SOT-363 |
| Andere Namen | RN1910(T5LFT)DKR RN1910(T5LFT)DKR-ND RN1910LF(CTDKR |
| Befestigungsart | Surface Mount |
| Feuchtigkeitsempfindlichkeitsniveau (MSL) | 1 (Unlimited) |
| Hersteller Standard Vorlaufzeit | 10 Weeks |
| Bleifreier Status / RoHS-Status | Lead free / RoHS Compliant |
| Frequenz - Übergang | 250MHz |
| detaillierte Beschreibung | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount US6 |
| DC Stromgewinn (HFE) (Min) @ Ic, VCE | 120 @ 1mA, 5V |
| Strom - Collector Cutoff (Max) | 100nA (ICBO) |
| Strom - Kollektor (Ic) (max) | 100mA |
Toshiba Semiconductor and Storage
