| Artikelnummer : | RN1909FE(TE85L,F) |
|---|---|
| Hersteller / Marke : | Toshiba Semiconductor and Storage |
| Beschreibung : | TRANS 2NPN PREBIAS 0.1W ES6 |
| RoHS Status : | Bleifrei / RoHS-konform |
| Verfügbare Menge | 390171 pcs |
| Datenblätte | RN1909FE(TE85L,F).pdf |
| Spannung - Kollektor-Emitter-Durchbruch (max) | 50V |
| VCE Sättigung (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Transistor-Typ | 2 NPN - Pre-Biased (Dual) |
| Supplier Device-Gehäuse | ES6 |
| Serie | - |
| Widerstand - Emitterbasis (R2) | 22 kOhms |
| Widerstand - Basis (R1) | 47 kOhms |
| Leistung - max | 100mW |
| Verpackung | Cut Tape (CT) |
| Verpackung / Gehäuse | SOT-563, SOT-666 |
| Andere Namen | RN1909FE(TE85LF)CT |
| Befestigungsart | Surface Mount |
| Feuchtigkeitsempfindlichkeitsniveau (MSL) | 1 (Unlimited) |
| Bleifreier Status / RoHS-Status | Lead free / RoHS Compliant |
| Frequenz - Übergang | 250MHz |
| detaillierte Beschreibung | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6 |
| DC Stromgewinn (HFE) (Min) @ Ic, VCE | 70 @ 10mA, 5V |
| Strom - Collector Cutoff (Max) | 100nA (ICBO) |
| Strom - Kollektor (Ic) (max) | 100mA |
Toshiba Semiconductor and Storage
