| Artikelnummer : | HN1A01FE-GR,LF |
|---|---|
| Hersteller / Marke : | Toshiba Semiconductor and Storage |
| Beschreibung : | TRANS 2PNP 50V 0.15A ES6 |
| RoHS Status : | Bleifrei / RoHS-konform |
| Verfügbare Menge | 613068 pcs |
| Datenblätte | HN1A01FE-GR,LF.pdf |
| Spannung - Kollektor-Emitter-Durchbruch (max) | 50V |
| VCE Sättigung (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Transistor-Typ | 2 PNP (Dual) |
| Supplier Device-Gehäuse | ES6 |
| Serie | - |
| Leistung - max | 100mW |
| Verpackung | Tape & Reel (TR) |
| Verpackung / Gehäuse | SOT-563, SOT-666 |
| Andere Namen | HN1A01FE-GR(5L,F,T HN1A01FE-GR(5LFTTR HN1A01FE-GR(5LFTTR-ND HN1A01FE-GR,LF(B HN1A01FE-GR,LF(T HN1A01FE-GRLF(BTR HN1A01FE-GRLF(BTR-ND HN1A01FE-GRLFTR HN1A01FEGRLFTR HN1A01FEGRLFTR-ND |
| Betriebstemperatur | 150°C (TJ) |
| Befestigungsart | Surface Mount |
| Feuchtigkeitsempfindlichkeitsniveau (MSL) | 1 (Unlimited) |
| Hersteller Standard Vorlaufzeit | 16 Weeks |
| Bleifreier Status / RoHS-Status | Lead free / RoHS Compliant |
| Frequenz - Übergang | 80MHz |
| detaillierte Beschreibung | Bipolar (BJT) Transistor Array 2 PNP (Dual) 50V 150mA 80MHz 100mW Surface Mount ES6 |
| DC Stromgewinn (HFE) (Min) @ Ic, VCE | 200 @ 2mA, 6V |
| Strom - Collector Cutoff (Max) | 100nA (ICBO) |
| Strom - Kollektor (Ic) (max) | 150mA |
