| Artikelnummer : | TK72E12N1,S1X |
|---|---|
| Hersteller / Marke : | Toshiba Semiconductor and Storage |
| Beschreibung : | MOSFET N CH 120V 72A TO-220 |
| RoHS Status : | Bleifrei / RoHS-konform |
| Verfügbare Menge | 13561 pcs |
| Datenblätte | TK72E12N1,S1X.pdf |
| VGS (th) (Max) @ Id | 4V @ 1mA |
| Vgs (Max) | ±20V |
| Technologie | MOSFET (Metal Oxide) |
| Supplier Device-Gehäuse | TO-220-3 |
| Serie | U-MOSVIII-H |
| Rds On (Max) @ Id, Vgs | 4.4 mOhm @ 36A, 10V |
| Verlustleistung (max) | 255W (Tc) |
| Verpackung | Tube |
| Verpackung / Gehäuse | TO-220-3 |
| Andere Namen | TK72E12N1,S1X(S TK72E12N1S1X |
| Betriebstemperatur | 150°C (TJ) |
| Befestigungsart | Through Hole |
| Feuchtigkeitsempfindlichkeitsniveau (MSL) | 1 (Unlimited) |
| Bleifreier Status / RoHS-Status | Lead free / RoHS Compliant |
| Eingabekapazität (Ciss) (Max) @ Vds | 8100pF @ 60V |
| Gate Charge (Qg) (Max) @ Vgs | 130nC @ 10V |
| Typ FET | N-Channel |
| FET-Merkmal | - |
| Antriebsspannung (Max Rds On, Min Rds On) | 10V |
| Drain-Source-Spannung (Vdss) | 120V |
| detaillierte Beschreibung | N-Channel 120V 72A (Ta) 255W (Tc) Through Hole TO-220-3 |
| Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 72A (Ta) |
Toshiba Semiconductor and Storage
