| Artikelnummer : | TJ30S06M3L(T6L1,NQ |
|---|---|
| Hersteller / Marke : | Toshiba Semiconductor and Storage |
| Beschreibung : | MOSFET P-CH 60V 30A DPAK-3 |
| RoHS Status : | Bleifrei / RoHS-konform |
| Verfügbare Menge | 43346 pcs |
| Datenblätte | 1.TJ30S06M3L(T6L1,NQ.pdf2.TJ30S06M3L(T6L1,NQ.pdf |
| VGS (th) (Max) @ Id | 3V @ 1mA |
| Vgs (Max) | +10V, -20V |
| Technologie | MOSFET (Metal Oxide) |
| Supplier Device-Gehäuse | DPAK+ |
| Serie | U-MOSVI |
| Rds On (Max) @ Id, Vgs | 21.8 mOhm @ 15A, 10V |
| Verlustleistung (max) | 68W (Tc) |
| Verpackung | Tape & Reel (TR) |
| Verpackung / Gehäuse | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Andere Namen | TJ30S06M3L(T6L1NQ TJ30S06M3LT6L1NQ |
| Betriebstemperatur | 175°C (TJ) |
| Befestigungsart | Surface Mount |
| Feuchtigkeitsempfindlichkeitsniveau (MSL) | 1 (Unlimited) |
| Bleifreier Status / RoHS-Status | Lead free / RoHS Compliant |
| Eingabekapazität (Ciss) (Max) @ Vds | 3950pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 80nC @ 10V |
| Typ FET | P-Channel |
| FET-Merkmal | - |
| Antriebsspannung (Max Rds On, Min Rds On) | 6V, 10V |
| Drain-Source-Spannung (Vdss) | 60V |
| detaillierte Beschreibung | P-Channel 60V 30A (Ta) 68W (Tc) Surface Mount DPAK+ |
| Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 30A (Ta) |
