| Artikelnummer : | SSM6J511NU,LF |
|---|---|
| Hersteller / Marke : | Toshiba Semiconductor and Storage |
| Beschreibung : | MOSFET P-CH 12V 14A UDFN6B |
| RoHS Status : | Bleifrei / RoHS-konform |
| Verfügbare Menge | 249629 pcs |
| Datenblätte | SSM6J511NU,LF.pdf |
| VGS (th) (Max) @ Id | 1V @ 1mA |
| Technologie | MOSFET (Metal Oxide) |
| Supplier Device-Gehäuse | 6-UDFNB (2x2) |
| Serie | U-MOSVII |
| Rds On (Max) @ Id, Vgs | 9.1 mOhm @ 4A, 8V |
| Verpackung | Tape & Reel (TR) |
| Verpackung / Gehäuse | 6-WDFN Exposed Pad |
| Andere Namen | SSM6J511NU,LF(B SSM6J511NU,LF(T SSM6J511NULF SSM6J511NULFTR |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
| Befestigungsart | Surface Mount |
| Feuchtigkeitsempfindlichkeitsniveau (MSL) | 1 (Unlimited) |
| Bleifreier Status / RoHS-Status | Lead free / RoHS Compliant |
| Eingabekapazität (Ciss) (Max) @ Vds | 3350pF @ 6V |
| Gate Charge (Qg) (Max) @ Vgs | 47nC @ 4.5V |
| Typ FET | P-Channel |
| FET-Merkmal | - |
| Drain-Source-Spannung (Vdss) | 12V |
| detaillierte Beschreibung | P-Channel 12V 14A (Ta) Surface Mount 6-UDFNB (2x2) |
| Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 14A (Ta) |
Toshiba Semiconductor and Storage
