| Artikelnummer : | RN4991(T5L,F,T) |
|---|---|
| Hersteller / Marke : | Toshiba Semiconductor and Storage |
| Beschreibung : | TRANS NPN/PNP PREBIAS 0.2W US6 |
| RoHS Status : | Bleifrei / RoHS-konform |
| Verfügbare Menge | 600790 pcs |
| Datenblätte | RN4991(T5L,F,T).pdf |
| Spannung - Kollektor-Emitter-Durchbruch (max) | 50V |
| VCE Sättigung (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Transistor-Typ | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Supplier Device-Gehäuse | US6 |
| Serie | - |
| Widerstand - Emitterbasis (R2) | - |
| Widerstand - Basis (R1) | 10 kOhms |
| Leistung - max | 200mW |
| Verpackung | Tape & Reel (TR) |
| Verpackung / Gehäuse | 6-TSSOP, SC-88, SOT-363 |
| Andere Namen | RN4991(T5LFT)TR RN4991T5LFT |
| Befestigungsart | Surface Mount |
| Feuchtigkeitsempfindlichkeitsniveau (MSL) | 1 (Unlimited) |
| Bleifreier Status / RoHS-Status | Lead free / RoHS Compliant |
| Frequenz - Übergang | 250MHz, 200MHz |
| detaillierte Beschreibung | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 200mW Surface Mount US6 |
| DC Stromgewinn (HFE) (Min) @ Ic, VCE | 120 @ 1mA, 5V |
| Strom - Collector Cutoff (Max) | 100µA (ICBO) |
| Strom - Kollektor (Ic) (max) | 100mA |
Toshiba Semiconductor and Storage
