| Artikelnummer : | RN2115MFV,L3F |
|---|---|
| Hersteller / Marke : | Toshiba Semiconductor and Storage |
| Beschreibung : | X34 PB-F VESM TRANSISTOR PD 150M |
| RoHS Status : | Bleifrei / RoHS-konform |
| Verfügbare Menge | 999976 pcs |
| Datenblätte | RN2115MFV,L3F.pdf |
| Spannung - Kollektor-Emitter-Durchbruch (max) | 50V |
| VCE Sättigung (Max) @ Ib, Ic | 300mV @ 500µA, 5mA |
| Transistor-Typ | PNP - Pre-Biased |
| Supplier Device-Gehäuse | VESM |
| Serie | - |
| Widerstand - Emitterbasis (R2) | 10 kOhms |
| Widerstand - Basis (R1) | 2.2 kOhms |
| Leistung - max | 150mW |
| Verpackung / Gehäuse | SOT-723 |
| Andere Namen | RN2115MFVL3F |
| Befestigungsart | Surface Mount |
| Hersteller Standard Vorlaufzeit | 16 Weeks |
| Bleifreier Status / RoHS-Status | Lead free / RoHS Compliant |
| detaillierte Beschreibung | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 150mW Surface Mount VESM |
| DC Stromgewinn (HFE) (Min) @ Ic, VCE | 50 @ 10mA, 5V |
| Strom - Collector Cutoff (Max) | 500nA |
| Strom - Kollektor (Ic) (max) | 100mA |
