| Artikelnummer : | PDTC114YS,126 |
|---|---|
| Hersteller / Marke : | NXP Semiconductors / Freescale |
| Beschreibung : | TRANS PREBIAS NPN 500MW TO92-3 |
| RoHS Status : | Bleifrei / RoHS-konform |
| Verfügbare Menge | 5519 pcs |
| Datenblätte | PDTC114YS,126.pdf |
| Spannung - Kollektor-Emitter-Durchbruch (max) | 50V |
| VCE Sättigung (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
| Transistor-Typ | NPN - Pre-Biased |
| Supplier Device-Gehäuse | TO-92-3 |
| Serie | - |
| Widerstand - Emitterbasis (R2) | 47 kOhms |
| Widerstand - Basis (R1) | 10 kOhms |
| Leistung - max | 500mW |
| Verpackung | Tape & Box (TB) |
| Verpackung / Gehäuse | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Andere Namen | 934057566126 PDTC114YS AMO PDTC114YS AMO-ND |
| Befestigungsart | Through Hole |
| Feuchtigkeitsempfindlichkeitsniveau (MSL) | 1 (Unlimited) |
| Bleifreier Status / RoHS-Status | Lead free / RoHS Compliant |
| detaillierte Beschreibung | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 500mW Through Hole TO-92-3 |
| DC Stromgewinn (HFE) (Min) @ Ic, VCE | 100 @ 5mA, 5V |
| Strom - Collector Cutoff (Max) | 1µA |
| Strom - Kollektor (Ic) (max) | 100mA |
| Basisteilenummer | PDTC114 |
