| Artikelnummer : | PBLS1502V,115 |
|---|---|
| Hersteller / Marke : | NXP Semiconductors / Freescale |
| Beschreibung : | TRANS NPN PREBIAS/PNP SOT666 |
| RoHS Status : | Bleifrei / RoHS-konform |
| Verfügbare Menge | 4742 pcs |
| Datenblätte | PBLS1502V,115.pdf |
| Spannung - Kollektor-Emitter-Durchbruch (max) | 50V, 15V |
| VCE Sättigung (Max) @ Ib, Ic | 150mV @ 500µA, 10mA / 250mV @ 50mA, 500mA |
| Transistor-Typ | 1 NPN Pre-Biased, 1 PNP |
| Supplier Device-Gehäuse | SOT-666 |
| Serie | - |
| Widerstand - Emitterbasis (R2) | 4.7 kOhms |
| Widerstand - Basis (R1) | 4.7 kOhms |
| Leistung - max | 300mW |
| Verpackung | Tape & Reel (TR) |
| Verpackung / Gehäuse | SOT-563, SOT-666 |
| Andere Namen | 568-7219-2 934058048115 PBLS1502V T/R PBLS1502V T/R-ND PBLS1502V,115-ND PBLS1502V115 |
| Befestigungsart | Surface Mount |
| Feuchtigkeitsempfindlichkeitsniveau (MSL) | 1 (Unlimited) |
| Bleifreier Status / RoHS-Status | Lead free / RoHS Compliant |
| Frequenz - Übergang | 280MHz |
| detaillierte Beschreibung | Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 15V 100mA, 500mA 280MHz 300mW Surface Mount SOT-666 |
| DC Stromgewinn (HFE) (Min) @ Ic, VCE | 30 @ 10mA, 5V / 150 @ 100mA, 2V |
| Strom - Collector Cutoff (Max) | 1µA, 100nA |
| Strom - Kollektor (Ic) (max) | 100mA, 500mA |
| Basisteilenummer | PBLS1502 |
NXP Semiconductors / Freescale
