Artikelnummer : | NSVMUN5316DW1T1G |
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Hersteller / Marke : | AMI Semiconductor / ON Semiconductor |
Beschreibung : | TRANS NPN/PNP 50V BIPO SC88-6 |
RoHS Status : | Bleifrei / RoHS-konform |
Verfügbare Menge | 351208 pcs |
Datenblätte | NSVMUN5316DW1T1G.pdf |
Spannung - Kollektor-Emitter-Durchbruch (max) | 50V |
VCE Sättigung (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Transistor-Typ | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Supplier Device-Gehäuse | SC-88/SC70-6/SOT-363 |
Serie | - |
Widerstand - Emitterbasis (R2) | - |
Widerstand - Basis (R1) | 4.7 kOhms |
Leistung - max | 250mW |
Verpackung | Tape & Reel (TR) |
Verpackung / Gehäuse | 6-TSSOP, SC-88, SOT-363 |
Andere Namen | NSVMUN5316DW1T1G-ND NSVMUN5316DW1T1GOSTR |
Befestigungsart | Surface Mount |
Feuchtigkeitsempfindlichkeitsniveau (MSL) | 1 (Unlimited) |
Hersteller Standard Vorlaufzeit | 40 Weeks |
Bleifreier Status / RoHS-Status | Lead free / RoHS Compliant |
Frequenz - Übergang | - |
detaillierte Beschreibung | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363 |
DC Stromgewinn (HFE) (Min) @ Ic, VCE | 160 @ 5mA, 10V |
Strom - Collector Cutoff (Max) | 500nA |
Strom - Kollektor (Ic) (max) | 100mA |