| Artikelnummer : | NSBC124XDXV6T1G |
|---|---|
| Hersteller / Marke : | AMI Semiconductor / ON Semiconductor |
| Beschreibung : | TRANS PREBIAS DUAL NPN SOT563 |
| RoHS Status : | Bleifrei / RoHS-konform |
| Verfügbare Menge | 418811 pcs |
| Datenblätte | NSBC124XDXV6T1G.pdf |
| Spannung - Kollektor-Emitter-Durchbruch (max) | 50V |
| VCE Sättigung (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Transistor-Typ | 2 NPN - Pre-Biased (Dual) |
| Supplier Device-Gehäuse | SOT-563 |
| Serie | - |
| Widerstand - Emitterbasis (R2) | 47 kOhms |
| Widerstand - Basis (R1) | 22 kOhms |
| Leistung - max | 500mW |
| Verpackung | Tape & Reel (TR) |
| Verpackung / Gehäuse | SOT-563, SOT-666 |
| Andere Namen | NSBC124XDXV6T1GOS NSBC124XDXV6T1GOS-ND NSBC124XDXV6T1GOSTR |
| Befestigungsart | Surface Mount |
| Feuchtigkeitsempfindlichkeitsniveau (MSL) | 1 (Unlimited) |
| Hersteller Standard Vorlaufzeit | 16 Weeks |
| Bleifreier Status / RoHS-Status | Lead free / RoHS Compliant |
| Frequenz - Übergang | - |
| detaillierte Beschreibung | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563 |
| DC Stromgewinn (HFE) (Min) @ Ic, VCE | 80 @ 5mA, 10V |
| Strom - Collector Cutoff (Max) | 500nA |
| Strom - Kollektor (Ic) (max) | 100mA |
| Basisteilenummer | NSBC1* |
AMI Semiconductor / ON Semiconductor
