| Artikelnummer : |
NSBC114YPDXV6T1 |
| Hersteller / Marke : |
AMI Semiconductor / ON Semiconductor |
| Beschreibung : |
TRANS PREBIAS NPN/PNP SOT563 |
| RoHS Status : |
Enthält Blei / RoHS nicht konform |
| Verfügbare Menge |
5490 pcs |
| Datenblätte |
NSBC114YPDXV6T1.pdf |
| Spannung - Kollektor-Emitter-Durchbruch (max) |
50V |
| VCE Sättigung (Max) @ Ib, Ic |
250mV @ 300µA, 10mA |
| Transistor-Typ |
1 NPN, 1 PNP - Pre-Biased (Dual) |
| Supplier Device-Gehäuse |
SOT-563 |
| Serie |
- |
| Widerstand - Emitterbasis (R2) |
47 kOhms |
| Widerstand - Basis (R1) |
10 kOhms |
| Leistung - max |
500mW |
| Verpackung |
Cut Tape (CT) |
| Verpackung / Gehäuse |
SOT-563, SOT-666 |
| Andere Namen |
NSBC114YPDXV6OSCT |
| Befestigungsart |
Surface Mount |
| Feuchtigkeitsempfindlichkeitsniveau (MSL) |
1 (Unlimited) |
| Bleifreier Status / RoHS-Status |
Contains lead / RoHS non-compliant |
| Frequenz - Übergang |
- |
| detaillierte Beschreibung |
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563 |
| DC Stromgewinn (HFE) (Min) @ Ic, VCE |
80 @ 5mA, 10V |
| Strom - Collector Cutoff (Max) |
500nA |
| Strom - Kollektor (Ic) (max) |
100mA |
| Basisteilenummer |
NSBC1* |
AMI Semiconductor / ON Semiconductor
