| Artikelnummer : | MMUN2131LT1G |
|---|---|
| Hersteller / Marke : | AMI Semiconductor / ON Semiconductor |
| Beschreibung : | TRANS PREBIAS PNP 246MW SOT23-3 |
| RoHS Status : | Bleifrei / RoHS-konform |
| Verfügbare Menge | 4200 pcs |
| Datenblätte | MMUN2131LT1G.pdf |
| Spannung - Kollektor-Emitter-Durchbruch (max) | 50V |
| VCE Sättigung (Max) @ Ib, Ic | 250mV @ 5mA, 10mA |
| Transistor-Typ | PNP - Pre-Biased |
| Supplier Device-Gehäuse | SOT-23-3 (TO-236) |
| Serie | - |
| Widerstand - Emitterbasis (R2) | 2.2 kOhms |
| Widerstand - Basis (R1) | 2.2 kOhms |
| Leistung - max | 246mW |
| Verpackung | Tape & Reel (TR) |
| Verpackung / Gehäuse | TO-236-3, SC-59, SOT-23-3 |
| Befestigungsart | Surface Mount |
| Feuchtigkeitsempfindlichkeitsniveau (MSL) | 1 (Unlimited) |
| Bleifreier Status / RoHS-Status | Lead free / RoHS Compliant |
| detaillierte Beschreibung | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236) |
| DC Stromgewinn (HFE) (Min) @ Ic, VCE | 8 @ 5mA, 10V |
| Strom - Collector Cutoff (Max) | 500nA |
| Strom - Kollektor (Ic) (max) | 100mA |
| Basisteilenummer | MMUN21**L |
AMI Semiconductor / ON Semiconductor
