| Artikelnummer : | IPB80N06S207ATMA1 |
|---|---|
| Hersteller / Marke : | International Rectifier (Infineon Technologies) |
| Beschreibung : | MOSFET N-CH 55V 80A TO263-3 |
| RoHS Status : | Bleifrei / RoHS-konform |
| Verfügbare Menge | 5518 pcs |
| Datenblätte | IPB80N06S207ATMA1.pdf |
| VGS (th) (Max) @ Id | 4V @ 180µA |
| Vgs (Max) | ±20V |
| Technologie | MOSFET (Metal Oxide) |
| Supplier Device-Gehäuse | PG-TO263-3-2 |
| Serie | OptiMOS™ |
| Rds On (Max) @ Id, Vgs | 6.3 mOhm @ 68A, 10V |
| Verlustleistung (max) | 250W (Tc) |
| Verpackung | Tape & Reel (TR) |
| Verpackung / Gehäuse | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Andere Namen | IPB80N06S2-07 IPB80N06S2-07-ND IPB80N06S207ATMA1TR SP000218818 |
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
| Befestigungsart | Surface Mount |
| Feuchtigkeitsempfindlichkeitsniveau (MSL) | 1 (Unlimited) |
| Bleifreier Status / RoHS-Status | Lead free / RoHS Compliant |
| Eingabekapazität (Ciss) (Max) @ Vds | 3400pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
| Typ FET | N-Channel |
| FET-Merkmal | - |
| Antriebsspannung (Max Rds On, Min Rds On) | 10V |
| Drain-Source-Spannung (Vdss) | 55V |
| detaillierte Beschreibung | N-Channel 55V 80A (Tc) 250W (Tc) Surface Mount PG-TO263-3-2 |
| Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 80A (Tc) |
International Rectifier (Infineon Technologies)
