| Artikelnummer : | FQPF3P50 |
|---|---|
| Hersteller / Marke : | AMI Semiconductor / ON Semiconductor |
| Beschreibung : | MOSFET P-CH 500V 1.9A TO-220F |
| RoHS Status : | Bleifrei / RoHS-konform |
| Verfügbare Menge | 5827 pcs |
| Datenblätte | FQPF3P50.pdf |
| VGS (th) (Max) @ Id | 5V @ 250µA |
| Vgs (Max) | ±30V |
| Technologie | MOSFET (Metal Oxide) |
| Supplier Device-Gehäuse | TO-220F |
| Serie | QFET® |
| Rds On (Max) @ Id, Vgs | 4.9 Ohm @ 950mA, 10V |
| Verlustleistung (max) | 39W (Tc) |
| Verpackung | Tube |
| Verpackung / Gehäuse | TO-220-3 Full Pack |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
| Befestigungsart | Through Hole |
| Feuchtigkeitsempfindlichkeitsniveau (MSL) | 1 (Unlimited) |
| Bleifreier Status / RoHS-Status | Lead free / RoHS Compliant |
| Eingabekapazität (Ciss) (Max) @ Vds | 660pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
| Typ FET | P-Channel |
| FET-Merkmal | - |
| Antriebsspannung (Max Rds On, Min Rds On) | 10V |
| Drain-Source-Spannung (Vdss) | 500V |
| detaillierte Beschreibung | P-Channel 500V 1.9A (Tc) 39W (Tc) Through Hole TO-220F |
| Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 1.9A (Tc) |
AMI Semiconductor / ON Semiconductor
