| Artikelnummer : | FJNS4207RTA |
|---|---|
| Hersteller / Marke : | AMI Semiconductor / ON Semiconductor |
| Beschreibung : | TRANS PREBIAS PNP 300MW TO92S |
| RoHS Status : | Bleifrei / RoHS-konform |
| Verfügbare Menge | 4103 pcs |
| Datenblätte | FJNS4207RTA.pdf |
| Spannung - Kollektor-Emitter-Durchbruch (max) | 50V |
| VCE Sättigung (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Transistor-Typ | PNP - Pre-Biased |
| Supplier Device-Gehäuse | TO-92S |
| Serie | - |
| Widerstand - Emitterbasis (R2) | 47 kOhms |
| Widerstand - Basis (R1) | 22 kOhms |
| Leistung - max | 300mW |
| Verpackung | Tape & Box (TB) |
| Verpackung / Gehäuse | TO-226-3, TO-92-3 Short Body |
| Befestigungsart | Through Hole |
| Feuchtigkeitsempfindlichkeitsniveau (MSL) | 1 (Unlimited) |
| Bleifreier Status / RoHS-Status | Lead free / RoHS Compliant |
| Frequenz - Übergang | 200MHz |
| detaillierte Beschreibung | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 300mW Through Hole TO-92S |
| DC Stromgewinn (HFE) (Min) @ Ic, VCE | 68 @ 5mA, 5V |
| Strom - Collector Cutoff (Max) | 100nA (ICBO) |
| Strom - Kollektor (Ic) (max) | 100mA |
