| Artikelnummer : | FCP165N65S3R0 |
|---|---|
| Hersteller / Marke : | AMI Semiconductor / ON Semiconductor |
| Beschreibung : | SUPERFET3 650V TO220 PKG |
| RoHS Status : | |
| Verfügbare Menge | 20466 pcs |
| Datenblätte | FCP165N65S3R0.pdf |
| VGS (th) (Max) @ Id | 4.5V @ 1.9mA |
| Vgs (Max) | ±30V |
| Technologie | MOSFET (Metal Oxide) |
| Supplier Device-Gehäuse | TO-220-3 |
| Serie | SuperFET® III |
| Rds On (Max) @ Id, Vgs | 165 mOhm @ 9.5A, 10V |
| Verlustleistung (max) | 154W (Tc) |
| Verpackung | Tube |
| Verpackung / Gehäuse | TO-220-3 |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
| Befestigungsart | Through Hole |
| Bleifreier Status | Lead free |
| Eingabekapazität (Ciss) (Max) @ Vds | 1500pF @ 400V |
| Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V |
| Typ FET | N-Channel |
| FET-Merkmal | - |
| Antriebsspannung (Max Rds On, Min Rds On) | 10V |
| Drain-Source-Spannung (Vdss) | 650V |
| detaillierte Beschreibung | N-Channel 650V 19A (Tc) 154W (Tc) Through Hole TO-220-3 |
| Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 19A (Tc) |
