| Artikelnummer : | DTC123JUBHZGTL |
|---|---|
| Hersteller / Marke : | LAPIS Semiconductor |
| Beschreibung : | NPN DIGITAL TRANSISTOR (WITH BUI |
| RoHS Status : | Bleifrei / RoHS-konform |
| Verfügbare Menge | 881086 pcs |
| Datenblätte | 1.DTC123JUBHZGTL.pdf2.DTC123JUBHZGTL.pdf |
| VCE Sättigung (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Transistor-Typ | NPN - Pre-Biased + Diode |
| Supplier Device-Gehäuse | UMT3F |
| Serie | Automotive, AEC-Q101 |
| Widerstand - Emitterbasis (R2) | 47 kOhms |
| Widerstand - Basis (R1) | 2.2 kOhms |
| Leistung - max | 200mW |
| Verpackung | Tape & Reel (TR) |
| Verpackung / Gehäuse | SC-85 |
| Andere Namen | DTC123JUBHZGTLTR |
| Befestigungsart | Surface Mount |
| Feuchtigkeitsempfindlichkeitsniveau (MSL) | 1 (Unlimited) |
| Hersteller Standard Vorlaufzeit | 7 Weeks |
| Bleifreier Status / RoHS-Status | Lead free / RoHS Compliant |
| Frequenz - Übergang | 250MHz |
| detaillierte Beschreibung | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased + Diode 100mA 250MHz 200mW Surface Mount UMT3F |
| DC Stromgewinn (HFE) (Min) @ Ic, VCE | 80 @ 10mA, 5V |
| Strom - Collector Cutoff (Max) | - |
| Strom - Kollektor (Ic) (max) | 100mA |
LAPIS Semiconductor
